document number: 81132 for tec hnical questions, contact: optochipsupport@vishay.com www.vishay.com rev. 1.2, 23-mar-11 1 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 specification of gaalas ir emitting diode chip tb9414va vishay semiconductors description tb9414va is an infrared, 940 nm emitting diode in gaalas double hetero technology with high radiant power and high speed. anode is the bond pad on top. features ? package type: chip ? package form: single chip ? technology: double hetero ? dimensions chip (l x w x h in mm): 0.37 x 0.37 x 0.19 ? peak wavelength: ? = 940 nm ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec general information the datasheet is based on vishay optoel ectronics sample testing under certain pr edetermined and assumed conditions, and is provided for illustration purpose only. customers are encouraged to perform testing in actu al proposed packaged and used conditions. vishay optoelectronics die products are tested us ing vishay optoelectronics ba sed quality assurance procedures and are manufactured using vishay optoelectronics established processes. estimates such as those described and set forth in this datasheet for semiconductor die will vary depending on a number of packagin g, handling, use, and ot her factors. therefore sold die may not perform on an equivale nt basis to standard package products. note ? test condition see table basic characteristics note ? moq: minimum order quantity - 21594 product summary component i e (mw/sr) ? (deg) ? p (nm) t r (ns) tb9414va 4.3 80 940 15 ordering information ordering code packaging remarks package form TB9414VA-SF-F wafer sawn on foil moq: 40 000 pcs chip absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit forward current i f 100 ma reverse voltage v r 5v surge forward current t p = 100 s i fsm 1a junction temperature t j 125 c operating temperature range t amb - 40 to + 100 c storage temperature range chip t stg1 - 40 to + 100 c storage temperature range on foil t stg2 - 40 to + 50 c
www.vishay.com for technica l questions, contact: optochipsupport@vishay.com document number: 81132 2 rev. 1.2, 23-mar-11 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 tb9414va vishay semiconductors specification of gaalas ir emitting diode chip notes (1) the measurements are based on samples of die which are mounted on a to-18 gold he ader without resin coating (2) the radiant intensity, i e , is measured on the geometric axis of the to-18 header (3) the radiant power, ? e , is measured with chip on bare plate and aperture an gle about 30, as indicated on the label of each wafer basic characteristics (t amb = 25 c, unless otherwise specified) fig. 1 - relative spectral emission ? e rel = f ( ? ) fig. 2 - radiant characteristics i rel = f( ? ) dimensions fig. 1 basic characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol min. typ. max. unit forward voltage i f = 100 ma v f 1.1 1.35 1.6 v radiant power (1) i f = 100 ma ? e 13.7 21 28 mw radiant intensity (2) i f = 100 ma i e 2.8 4.3 5.8 mw/sr radiant power (epoxy encapsulated) i f = 100 ma ? e 29 44 60 mw radiant power chip (3) i f = 50 ma ? e 3.4 5.2 7 mw temperature coefficient of radiant power i f = 100 ma tk ? e - 0.51 %/k reverse voltage i r = 10 a v r 51750v temperature coefficient of forward voltage i f = 1 ma tk vf - 1.8 mv/k angle of half intensity i f = 100 ma ? > 80 deg peak wavelength i f = 30 ma ? p 920 940 960 nm spectral bandwidth i f = 30 ma ? 0.5 15 25 45 nm rise time/f all time i f = 100 ma t r , t f 71525ns 0 0.25 0.5 0.75 1.0 1.25 750 800 850 900 950 1000 1050 1100 21632 - wavelength (nm) ? e rel - relative radiant power relative angular intensity 90 80 70 60 50 40 30 20 10 0 - 80 - 70 - 60 - 50 - 40 - 30 - 20 - 10 0 21630 100 50 0 50 100 n (cathode) side electrode pattern: p (anode) side p substrate sectional view (schematic): anode typ. 185 m n
document number: 81132 for tec hnical questions, contact: optochipsupport@vishay.com www.vishay.com rev. 1.2, 23-mar-11 3 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 tb9414va specification of ga alas ir emitting diode chip vishay semiconductors note (1) all chips are checked in accordance with the vishay semi conductor, specification of visual inspection fvov6870. the visual inspection shall be made in accordance with the spe cification of visual inspection as referenced. the visual inspe ction of chip backside is performe d with stereo microscope with incide nt light and 40x to 80x magnification. the quality inspection (final visual inspection) is performed by production. an additional visual inspection step as special re lease procedure by qm is not installed. handling and storage conditions ? the hermetically sealed shipment lots shall be opened in temperature and moisture cont rolled cleanroom environment only. it is mandatory to follow the rules fo r disposition of material that can be hazardous for humans and environment. ? product must be handled only at esd safe workstations. standard esd precautions and safe work environments are as defined in mil-hdbk-263. ? singulated die are not to be handled with tweezers. a vacuum wand with non metallic esd pro tected tip should be used. packing chips are fixed on adhesive foil. upon request the foils can be mounted on plastic frame or disco frame. for shipment, the wafers are arranged to stacks and hermeti cally sealed in plastic bags to ensure protection against environmental influence (humidity and contamination). use for recycling reliable operators only. we can help getting in touch with your nearest sales office. by agreement we will ta ke back packing material, if it is sorted. yo u will have to bear the costs of transpor t. we will invoice you for any costs incurre d for packing material that is re turned unsorted or which we are not obliged to accept. mechanical dimensions parameter symbol min. typ. max. unit length of chip edge (x-direction) l x 0.37 mm length of chip edge (y-direction) l y 0.37 mm emission area a e 0.325 x 0.325 mm 2 die height h 0.19 mm diameter of bondpad d 0.11 mm additional information (1) frontside metallization, anode aluminum backside metallization, cathode gold alloy dicing sawing die bonding technology epoxy bonding
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